Typical Characteristics
20
V GS = -4.5V
-2.5V
1.6
-3.0V
15
10
-2.0V
1.4
1.2
V GS = -2.5V
-3.0V
-3.5V
5
1
-4.0V
-4.5V
0
0
1 2 3
-V DS , DRAIN TO SOURCE VOLTAGE (V)
4
0.8
0
5
10
-I D , DRAIN CURRENT (A)
15
20
Figure 1. On-Region Characteristics.
1.6
I D = -4.5A
V GS = -4.5V
1.4
1.2
1
0.8
0.6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
I D = -2.2A
0.12
0.09
T A = 125 o C
0.06
T A = 25 o C
0.03
0
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
T J , JUNCTION TEMPERATURE ( o C)
Figure 3. On-Resistance Variation with
Temperature.
15
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
12
V DS = -5V
T A = -55 o C
25 o C
10
V GS = 0V
125 o C
9
6
3
1
0.1
0.01
0.001
T A = 125 o C
25 o C
-55 o C
0
0.5
1
1.5
2
2.5
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC638P Rev F (W)
相关PDF资料
FDC6392S MOSFET P-CH 20V 2.2A SSOT-6
FDC6401N MOSFET N-CH DUAL 20V SSOT-6
FDC640P_F095 MOSFET P-CH 20V 4.5A 6-SSOT
FDC6420C MOSFET N/P-CH 20V 3.0A SSOT-6
FDC642P MOSFET P-CH 20V 4A SSOT-6
FDC645N MOSFET N-CH 30V 5.5A SSOT-6
FDC6506P MOSFET P-CHAN DUAL 30V SSOT6
FDC653N MOSFET N-CH 30V 5A SSOT-6
相关代理商/技术参数
FDC638P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6
FDC638P_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET
FDC638P_Q 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC638P-CUT TAPE 制造商:FAIRCHILD 功能描述:20 V 48 mOhm P-Channel 2.5V PowerTrench Specified Mosfet SSOT-6
FDC6392S 功能描述:MOSFET 20V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6392S_Q 功能描述:MOSFET 20V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6401N 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC6401N_NL 功能描述:MOSFET Dual N-Ch 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube